Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
heterojunction bipolar transistor — įvairialytis dvipolis tranzistorius statusas T sritis radioelektronika atitikmenys: angl. heterojunction bipolar transistor; heterostructure bipolar transistor vok. Bipolartransistor mit Heteroübergang, m; Heterojunction Bipolartransistor, m rus … Radioelektronikos terminų žodynas
Heterostructure-emitter bipolar transistor — The Heterojunction emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier… … Wikipedia
Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
transistor bipolaire à hétérojonctions — įvairialytis dvipolis tranzistorius statusas T sritis radioelektronika atitikmenys: angl. heterojunction bipolar transistor; heterostructure bipolar transistor vok. Bipolartransistor mit Heteroübergang, m; Heterojunction Bipolartransistor, m rus … Radioelektronikos terminų žodynas
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Transistor de efecto campo — P channel N channel Símbolos esquemáticos para los JFETs canal n y canal p. G=Puerta(Gate), D=Drenador(Drain) y S=Fuente(Source). El transistor de efecto campo (Field Effect Transistor o FET, en inglés) es en realidad una familia de transistores… … Wikipedia Español
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a … Wikipedia
Bipolartransistor mit Heteroübergang — įvairialytis dvipolis tranzistorius statusas T sritis radioelektronika atitikmenys: angl. heterojunction bipolar transistor; heterostructure bipolar transistor vok. Bipolartransistor mit Heteroübergang, m; Heterojunction Bipolartransistor, m rus … Radioelektronikos terminų žodynas
Heterojunction-Bipolartransistor — įvairialytis dvipolis tranzistorius statusas T sritis radioelektronika atitikmenys: angl. heterojunction bipolar transistor; heterostructure bipolar transistor vok. Bipolartransistor mit Heteroübergang, m; Heterojunction Bipolartransistor, m rus … Radioelektronikos terminų žodynas
